CY7C1021BV33-12ZCT

high-performance, CMOS static RAM, TSOP44, 576 mW, 15 ns, Independent control

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PartNumber:: CY7C1021BV33-12ZCT

Brand:: Cypress Semiconductor - Cypress | Pack: TSOP | D/C: 01+

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Products Upload time: 2011-12-09

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Part Number:CY7C1021BV33-12ZCT
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Product Summary

The CY7C1021BV33-12ZCT is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0 through A15). If Byte High Enable (BHE) is LOW, then data of the CY7C1021BV33-12ZCT from I/O pins (I/O9 through I/O16) is written into the location specified on the address pins (A0 through A15).

Parametrics

CY7C1021BV33-12ZCT absolute maximum ratings: (1)Storage Temperature: –65℃ to +150℃; (2)Ambient Temperature with Power Applied: –55℃ to +125℃; (3)Supply Voltage on VCC to Relative GND: –0.5V to +4.6V; (4)DC Voltage Applied to Outputs in High Z State: –0.5V to VCC+0.5V; (5)DC Input Voltage: –0.5V to VCC+0.5V; (6)Current into Outputs (LOW): 20 mA; (7)Static Discharge Voltage>2001V.

Features

CY7C1021BV33-12ZCT features: (1)3.3V operation (3.0V.6V); (2)High speed. tAA = 10/12/15 ns; (3)CMOS for optimum speed/power; (4)Low Active Power (L version). 576 mW (max.); (5)Low CMOS Standby Power (L version). 1.80 mW (max.); (6)Automatic power-down when deselected; (7)Independent control of upper and lower bits; (8)Available in 44-pin TSOP II and 400-mil SOJ; (9)Available in a 48-Ball Mini BGA package.