Product Summary

The M29F400B-120N1 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-systemon aByte-by-Byte orWord-by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The M29F400B-120N1 can also be programmed in standard programmers.

Parametrics

M29F400B-120N1 absolute maximum ratings: (1)TA, Ambient Operating Temperature:–40 to 125℃; (2)TBIAS, Temperature Under Bias: –50 to 125℃; (3)TSTG, Storage Temperature: –65 to 150℃; (4)VIO, Input or Output Voltages: –0.6 to 7 V; (5)VCC, Supply Voltage: –0.6 to 7 V; (6)V(A9, E, G, RP), A9, E, G, RP Voltage: –0.6 to 13.5 V.

Features

M29F400B-120N1 features: (1)5V±10% supply voltage for program, erase and readoperations; (2)fast access time: 55ns; (3)fast programming time–10μs by Byte / 16μs by Word typical; (4)program/erase controller (P/E.C.): ProgramByte-by-Byte or Word-by-Word; Status Register bits and Ready/Busy Output; (5)Block, multi-block and chip erase; (6)multi-block protection/temporary unprotectionmodes; (7)erase suspend and resume modes: Read and Program another Block during Erase Suspend; (8)lowpower consumption: Stand-by and Automatic Stand-by; (9)100,000 program/erase cycles per block; (10)20 years dataretention: Defectivity below 1ppm/year.

Diagrams

M29F400B-120N1 logic diagram

M29F002B
M29F002B

Other


Data Sheet

Negotiable 
M29F002BB
M29F002BB

Other


Data Sheet

Negotiable 
M29F002BB70K1
M29F002BB70K1

STMicroelectronics

Flash 2M (256Kx8) 70ns

Data Sheet

Negotiable 
M29F002BB70K6
M29F002BB70K6

STMicroelectronics

Flash 2M (256Kx8) 70ns

Data Sheet

Negotiable 
M29F002BB70K6E
M29F002BB70K6E


IC FLASH 2MBIT 70NS 32PLCC

Data Sheet

Negotiable 
M29F002BB70N1
M29F002BB70N1

STMicroelectronics

Flash 2M (256Kx8) 70ns

Data Sheet

Negotiable