TLP741J

DIP-6, GaAs IRed, Photo-Thyristor, 600 V, 10 mA , Toshiba Semiconductor , UL recognized

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PartNumber:: TLP741J

Brand:: Toshiba Semiconductor - Toshiba | Pack: DIP | D/C: 11+

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Products Upload time: 2011-12-09

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Part Number:TLP741J
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Product Summary

The TOSHIBA TLP741J is a GaAs IRed & Photo-Thyristor which consists of a photo-thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.

Parametrics

TLP741J absolute maximum ratings: (1)Forward current: 60 mA; (2)Forward current derating (Ta ≥ 39℃): -0.7 mA / ℃; (3)Peak forward current (100 μs pulse, 100 pps): 1 A; (4)Power dissipation: 100 mW; (5)Power dissipation derating (Ta ≥ 25℃): -1.0 mW / ℃; (6)Reverse voltage: 5 V; (7)Junction temperature: 125 ℃; (8)Peak forward voltage (RGK = 27 kΩ): 600 V; (9)Peak reverse voltage (RGK = 27 kΩ): 600 V; (10)On?state current: 150 mA; (11)On?state current derating (Ta ≥ 25℃): -2.0 mA /℃; (12)Peak on?state current (100μs pulse, 120 pps): 3 A; (13)Peak one cycle surge current: 2 A; (14)Peak reverse gate voltage: 5 V; (15)Power dissipation PD 150 mW; (16)Power dissipation derating (Ta ≥ 25℃): -2.0 mW / ℃; (17)Junction temperature: 100℃; (18)Storage temperature range: -55~125℃; (19)Operating temperature range: -55~100 ℃; (20)Lead soldering temperature (10 s): 260℃; (21)Total package power dissipation: 250 mW; (22)Total package power dissipation derating (Ta ≥ 25℃):-3.3 mW/℃; (23)Isolation voltage (AC, 1 min., R.H.≤ 60%): 4000 Vrms.

Features

TLP741J features: (1)Peak off-state voltage: 600 V (min.); (2)Trigger LED current: 10 mA (max.); (3)On-state current: 150 mA (max.); (4)UL recognized: UL1577, file no. E67349; (5)BSI approved: BS EN60065: 2002, Certificate no. 8877,BS EN60950-1: 2002, Certificate no. 8878; (6)Isolation voltage: 4000 Vrms (min.); (7)Option (D4) type; (8)VDE approved: DIN EN 60747-5-2; (9)Certificate no. 40009302; (10)Maximum operating insulation voltage: 630 VPK; (11)Highest permissible over voltage: 6000 V.