M29F400B-120N1

non-volatile memory, TSOP54, –0.6 to 7 V, M29F400B-120N1, STMicroelectronics

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Price:: US $1.60~1.90 / piece [Get Latest Price]

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	US $1.60~1.90

PartNumber:: M29F400B-120N1

Brand:: STMicroelectronics - ST | Pack: TSOP | D/C: 98+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-03-22

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Part Number:M29F400B-120N1
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Product Summary

The M29F400B-120N1 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-systemon aByte-by-Byte orWord-by-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The M29F400B-120N1 can also be programmed in standard programmers.

Parametrics

M29F400B-120N1 absolute maximum ratings: (1)TA, Ambient Operating Temperature:–40 to 125℃; (2)TBIAS, Temperature Under Bias: –50 to 125℃; (3)TSTG, Storage Temperature: –65 to 150℃; (4)VIO, Input or Output Voltages: –0.6 to 7 V; (5)VCC, Supply Voltage: –0.6 to 7 V; (6)V(A9, E, G, RP), A9, E, G, RP Voltage: –0.6 to 13.5 V.

Features

M29F400B-120N1 features: (1)5V±10% supply voltage for program, erase and readoperations; (2)fast access time: 55ns; (3)fast programming time–10μs by Byte / 16μs by Word typical; (4)program/erase controller (P/E.C.): ProgramByte-by-Byte or Word-by-Word; Status Register bits and Ready/Busy Output; (5)Block, multi-block and chip erase; (6)multi-block protection/temporary unprotectionmodes; (7)erase suspend and resume modes: Read and Program another Block during Erase Suspend; (8)lowpower consumption: Stand-by and Automatic Stand-by; (9)100,000 program/erase cycles per block; (10)20 years dataretention: Defectivity below 1ppm/year.